B58655

The B58655 is a SOP-20 packaged, N-channel enhancement mode MOSFET from Siemens. It is designed for use in high-side switching applications. Description: The B58655 is a N-channel enhancement mode MOSFET with a maximum drain current of 5A and a maximum drain-source voltage of 60V. It has a low on-resistance of 0.2Ω and a low gate charge of 4.5nC. Features: - Low on-resistance of 0.2Ω - Maximum drain current of 5A - Maximum drain-source voltage of 60V - Low gate charge of 4.5nC - SOP-20 package Applications: The B58655 is designed for use in high-side switching applications such as motor control, DC-DC converters, and power supplies.(For reference only)
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